| 摘要 |
PURPOSE: A method for manufacturing a silicon rod using a plasma CVD(Chemical Vapor Deposition) device is provided to obtain a polysilicon or amorphous silicon rod by controlling CVD conditions to differentiate a crystalline structure. CONSTITUTION: A method for manufacturing a silicon rod using a plasma CVD(Chemical Vapor Deposition) device(1) comprises the steps of: arranging a silicon core filament(30) separately from a rotary electrode(20) in a CVD reaction chamber(10), injecting silicon forming gas and inert gas into the CVD reaction chamber, and rotating the rotary electrode and the silicon core filament and applying power to the rotary electrode to induce chemical reaction of reaction gas with plasma created between the rotary electrode and the silicon core filament so that silicon is deposed on the silicon core filament. |
