METHOD OF REPRODUCING SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING REPRODUCED SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method suitable for reproduction of a semiconductor substrate.

SOLUTION: A semiconductor substrate in which there is a convex part including a damaged semiconductor region and an insulating layer in a peripheral edge part is reproduced by performing: an etching treatment of removing the insulating layer; and an etching treatment of selectively removing the damaged semiconductor region to an undamaged semiconductor region by using a mixture containing nitric acid, a material for dissolving a semiconductor material configuring the semiconductor substrate oxidized by the nitric acid, a material for controlling the oxidation speed of the semiconductor material and the dissolving speed of the oxidized semiconductor material, and nitrous acid. The concentration of the nitrous acid of the mixture is 10 mg/l or more and 1000 mg/l or less.

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