| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of a wiring structure which is excellent in dielectric breakdown resistance even if a porous low dielectric constant insulating film is used. <P>SOLUTION: In the method of manufacturing a semiconductor device, a wiring film is constituted in a CMP treatment step. A porous low dielectric constant insulating film having been contaminated in the CMP treatment is applied with an acid treatment, anneal treatment, or cleaning treatment step at a contaminated point, thereby the amount of residue of organic component, water content, copper, natrium, kalium, or the like on the surface of the porous low dielectric constant insulating film is reduced to a specified value or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
