NANOSTRUCTURE, NANOSTRUCTURE FABRICATION METHOD, AND PHOTOVOLTAIC CELL INCORPORATING A NANOSTRUCTURE

摘要

The application discloses a technique for fabricating gallium-arsenide-phosphorous (GaAsP) nanostructures using gallium-assisted (Ga-assisted) Vapour-Liquid-Solid (VLS ) growth, i.e. without requiring gold catalyst particles. The resulting Ga-assisted GaAsP nanostructures may be free of gold particles, which renders them useful for optoelectronic applications, e.g. as a junction in a solar cell. The Ga-assisted GaAsP nanostructures can be fabricated with a band gap in the range 1.6 to 1.8 eV (e.g. at and around 1.7 eV).