发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to lead out easily the signal waveform of the desired lower layer metal wiring of a semiconductor device by a method wherein a metal layer not to be used for transmission of a signal, and led out from the lower layer metal wiring through a connecting hole is provided to an uppermost layer metal wiring. CONSTITUTION:A connecting hole 7 is formed at a second layer formation time on a first layer Al wiring 52 covered with an insulating film 4, and a tap 62 for contact of an Au wire is provided according to the second layer Al wiring. When the tap 62 exposed on the uppermost layer is provided previously in such a way, the signal waveform of the first layer Al wiring 52 can be led out easily to enable to perform an analysis of inferiority or valuation. At the case when metal wirings of three layers or more are to be provided, a metal tap for an analysis of inferiority or valuation is provided on the uppermost layer to lead out the signal waveform of the desired lower layer metal wiring.
申请公布号 JPS59231831(A) 申请公布日期 1984.12.26
申请号 JP19830106175 申请日期 1983.06.14
申请人 TOSHIBA KK;TOUSHIBA MAIKON ENGINEERING KK 发明人 SUEDA AKIHIRO;USUI HIDEHITO
分类号 H01L21/3205;H01L21/66;H01L23/52;(IPC1-7):H01L21/66;H01L21/88 主分类号 H01L21/3205
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