发明名称 CMOS IMAGING DEVICE WITH THREE-DIMENSIONAL ARCHITECTURE
摘要 <p>An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.</p>
申请公布号 EP2553725(A1) 申请公布日期 2013.02.06
申请号 EP20110709958 申请日期 2011.03.25
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 PEIZERAT, ARNAUD;CAZAUX, YVON;TCHAGASPANIAN, MICHAEEL
分类号 H01L27/146 主分类号 H01L27/146
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