| 摘要 |
PURPOSE:To reduce the parasitic capacity to be added to the semiconductor parts of a semiconductor integrated circuit device and to contrive to enhance the operating speed of the device to a higher speed by a method wherein the protruded semiconductor parts are formed on the prescribed parts of the main surface of the semiconductor substrate and an insulating film, by which the semiconductor parts are electrically isolated from the semiconductor substrate, is formed under the lower parts of the semiconductor parts. CONSTITUTION:In the semiconductor integrated circuit device having an isolation structure, protruded (bar-shaped) n-type semimconductor parts 5A are provided on the upper part of the main surface of a semiconductor substrate 5 through an insulating film 6. The insulating film 6 is formed into an isolation structure to isolate electrically both of the semiconductor parts 5A and the semiconductor substrate 5. As this isolation structure is constituted of the insulating film 6 having a smaller specific dielectric constant compared to a p-n junction isolation structure, the parasitic capacity to be added to the semiconductor parts 5A can bre reduced. By this constitution, to enhance the operating speed of the semiconductor element to a higher speed can be contrived. Moreover, the n-type semiconductor substrate 5 consisting of single crystal silicon can be constituted at low cost compared to a substrate having insulation properties such as a sapphire substrate. |
