| 摘要 |
PURPOSE:To form a self-alignment type bipolar transistor, etc., capacitance between a collector and a base of which is kept constant, by forming a vapor growth film in predetermined thickness on the side surface of a reference pattern, shaping a leading-out electrode, aligned with the side surface of the vapor growth film and forming a reverse conduction type region through an opening shaped by removing the vapor growth film. CONSTITUTION:First insulating films 2, 3 having oxidation resistance are formed onto one conduction type semiconductor base body 1, an inorganic material pattern 4 in basic size is shaped onto the insulating films 2, 3, a second insulating film 5 is formed on the side surface of the pattern 4, and a reverse conduction type leading-out electrode 6 consisting of a first heat-resistant electrode material is shaped around the inorganic material pattern 4 with the insulating film 5. The second insulating film 5 and the first insulating films 2, 3 in a section just under the insulating film 5 are removed selectively, first openings 7 from which the surface of the base body is exposed are formed between the inorganic material pattern 4 and the leading-out electrode 6, and first reverse conduction type impurity introducing regions 108 are shaped to the base body 1 through the openings 7. The inorganic material pattern 4 is removed, a reverse conduction type connecting electrode 10 is formed on the internal side surface of the leading-out electrode 6, and a third insulating film 11 is shaped selectively on the surfaces of the connecting electrode 10 and the leading-out electrode 6 through thermal oxidation.
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