发明名称 |
Hybrid contact structure with low aspect ratio contacts in a semiconductor device |
摘要 |
By forming the first metallization layer of a semiconductor device as a dual damascene structure, the contact elements may be formed on the basis of a significantly reduced aspect ratio, thereby enhancing process robustness and also improving electrical performance of the contact structure.
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申请公布号 |
US8368221(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20080131332 |
申请日期 |
2008.06.02 |
申请人 |
ADVANCED MICRO DEVICES, INC.;FEUSTEL FRANK;FROHBERG KAI;WERNER THOMAS |
发明人 |
FEUSTEL FRANK;FROHBERG KAI;WERNER THOMAS |
分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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