发明名称 Integrated circuit with ESD structure
摘要 An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone.
申请公布号 US8368177(B2) 申请公布日期 2013.02.05
申请号 US20100905156 申请日期 2010.10.15
申请人 INFINEON TECHNOLOGIES AG;MEISER ANDREAS PETER;PRECHTL GERHARD;JENSEN NILS 发明人 MEISER ANDREAS PETER;PRECHTL GERHARD;JENSEN NILS
分类号 H01L21/70;H01L21/20;H01L29/00;H01L29/66 主分类号 H01L21/70
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