发明名称 Method and apparatus for designing an integrated circuit using inverse lithography technology
摘要 Method and apparatus for designing an integrated circuit by calculating an optimised reticle layout design from an IC layout design and a model describing an optical system for transferring the IC layout design onto a semiconductor wafer using a reticle, wherein the IC layout design comprises features defined by a plurality of boundaries. Approximating the plurality of boundaries to generate an approximated IC layout design suitable for the manufacture of the IC. Performing OPC simulation on at least a portion of the approximated IC layout design.
申请公布号 US8370773(B2) 申请公布日期 2013.02.05
申请号 US20100377664 申请日期 2010.08.03
申请人 FREESCALE SEMICONDUCTOR, INC.;KONINKLIJKE PHILIPS ELECTRONICS N.V.;LUCAS KEVIN DEAN;BOONE ROBERT ELLIOTT;RODY YVES 发明人 LUCAS KEVIN DEAN;BOONE ROBERT ELLIOTT;RODY YVES
分类号 G06F17/50;G03F1/00;G03F1/36 主分类号 G06F17/50
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