| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an infrared sensor capable of reducing a variation of the S/N ratio in a plane of an infrared sensor chip caused from the heat generated by an IC chip. <P>SOLUTION: The infrared sensor comprises: an infrared sensor chip 100; an IC chip 200; and a package 300. The package 300 comprises: a base substrate 301, on one surface of which, an infrared sensor chip 100 is mounted, and on the other surface of which, an IC chip 200 is mounted; a first wall portion 302 protruding from the base substrate 301 at the one side of the base substrate 301 and enclosing the infrared sensor chip 100; and a second portion 303 protruding from the base substrate 301 at the other surface of the base substrate 301 and enclosing the IC chip 200. In the infrared sensor, the infrared sensor chip 100 and the IC chip 200 face to each other with the base substrate 301 interposed therebetween. <P>COPYRIGHT: (C)2013,JPO&INPIT |
