SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A silicon carbide semiconductor device is provided to be used in a high temperature by using a temperature measurement resistor including barrier metal. CONSTITUTION: A p-well region(3) is selectively formed in the upper surface of an epitaxial layer(2). An n-type source region(5) is formed in the surface part of the p-well region. A terminal p-well region(4) is formed in the upper surface of the epitaxial layer. A gate oxide film(8) covering an active area and a field oxide film(9) covering a termination region are formed on the epitaxial layer. A gate electrode(10) is formed over the p-well region.