| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal diamond substrate with excellent flatness of surface without a defect such as a crack, capable of reducing the cost because of a high growing rate, and to provide a thick film diamond substrate obtained by the method. <P>SOLUTION: The diamond substrate is obtained by growing diamond on a base diamond substrate of crystal structure ä111} having an off angle of 2° or more by means of chemical vapor deposition (CVD) under a condition expressing lateral growth. <P>COPYRIGHT: (C)2013,JPO&INPIT |
