MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve controllability of the composition ratio of a first metal element to a second metal element in a metal oxide film in formation of the metal oxide film containing the first metal element and the second metal element.

SOLUTION: A manufacturing method includes: a first step of forming a first metal oxide film containing a first metal element on a substrate by supplying first material containing the first metal element and oxidant into a processing chamber containing the substrate; a second step of forming a second metal oxide film containing the first metal element and a second metal element on the substrate by supplying mixed material of the first material and second material containing a second metal element, and the oxidant into the processing chamber; and a third step of laminating the first metal oxide film and the second metal oxide film alternately on the substrate by repeating the first and second steps alternately to form a third metal oxide film containing the first metal element and the second metal element.

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