| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which ensures precise patterning of a line space pattern and a wide pattern, even if both patterns are mixed. <P>SOLUTION: In the manufacturing method of a semiconductor device, a hard mask layer is formed on a processed layer. A first mask layer is formed thereon and patterned. A carbon layer is formed in a region from where the first mask layer is removed, and patterned. Pattern width of the carbon layer is reduced by etching the carbon layer partially. A second mask layer is formed of the same material as that of the first mask layer, and etched so as to leave the second mask layer on both side faces of the pattern of the carbon layer. The carbon layer sandwiched by the patterns of the second mask layer is removed. A hard mask layer is patterned using the patterns of the first and second mask layers as a mask. The patterns of the first and second mask layers are removed. The processed layer is patterned using the hard mask layer as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
