| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor element and a manufacturing method thereof, in which the number of ion implantation steps is reduced and the optical semiconductor element is manufactured through easy manufacturing process. <P>SOLUTION: Impurities of conductivity types are ion-implanted in slab waveguide parts and protruded regions in contact therewith under conditions where the peak of implanted ion distribution becomes a deeper position than the thickness of the slab waveguide part and a shallower position than the thickness of the protruded region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
