| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving a semiconductor device yield by reducing thickness variations in a substrate surface of a conductive film formed on a surface of a metal oxide film, and also improving semiconductor device productivity by improving a growth rate of the conductive film. <P>SOLUTION: A manufacturing method of a semiconductor device includes the steps of: forming a dielectric film 5 containing a metal oxide film on a semiconductor substrate 1; and forming a conductive film 6 on a surface 5a of the dielectric film 5 with an amorphous metal oxide film exposed to the surface 5a in the dielectric film 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
