Method for manufacturing e.g. LED, involves realizing substrate or epitaxial coating containing gallium nitride, and etching sacrificial buffer layer to separate substrate or coating, where substrate is maintained with high temperature

摘要

The method involves realizing a substrate (GaNref) or epitaxial coating containing gallium-nitride including a layer of gallium-nitride (GaNi) or an alloy of gallium-nitride at an interface with a sacrificial buffer layer (ZnOi). The sacrificial buffer layer is etched to separate the gallium-nitride substrate or epitaxial coating. The substrate is maintained with high temperature of about few hundreds of degrees Celsius during deposition of the buffer layer, where the buffer layer has thickness between 0.5 nanometer and 100 microns.