| 摘要 |
<p>In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.</p> |
