| 摘要 |
Techniques are generally described for non-invasive, post-silicon characterization of—leakage power for devices of an integrated circuit (IC). A system of sparse leakage power equations may be developed for the devices (e.g. gates) within the IC to be solved using compressive sensing (CS) techniques. Input Vectors (IV) may be applied at input terminal of the IC, and power of the IC may be measured. The measurements may be used in conjunction with the set of sparse equations to determine leakage power values for individual devices, not directly accessible. Pre-processing and post-processing techniques may be employed to make the system of equations more sparse and further improve the efficiency of applying CS techniques to solve the equations. Example processing may include variable splitting, device grouping, IV and equation selection, measurement under elevated IC temperature, and bootstrapping. Other aspects may be disclosed and claimed.
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