发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To prevent an edge gas introduced to an edge region of a substrate from spreading to the center region of a substrate. <P>SOLUTION: A substrate processing apparatus comprises an upper electrode 200 included in a gas introduction part separately supplying a gas toward a center region of a substrate and an edge region on a periphery of the center region. The upper electrode includes a center gas introduction part 204 provided with a plurality of gas holes 212 of a center gas and an edge gas introduction part 206 provided with a plurality of gas holes 214 of an edge gas. The substrate processing apparatus further comprises a gas hole formation plate 230 having gas holes 232 linked to the gas holes of the edge gas introduction part and attached to an undersurface of the edge gas introduction part to allow adjustment of vertical positions of the edge gas jetting ports. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013021050(A) |
申请公布日期 |
2013.01.31 |
申请号 |
JP20110151650 |
申请日期 |
2011.07.08 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KAWAMATA SEIYA;HONDA MASANOBU;KUBOTA KAZUHIRO |
分类号 |
H01L21/205;C23C16/455;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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