发明名称 METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME
摘要 A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted.
申请公布号 US2013029473(A1) 申请公布日期 2013.01.31
申请号 US201213558932 申请日期 2012.07.26
申请人 SAMSUNG CORNING PRECISION MATERIALS CO., LTD.;KIM DONG-WOON;KIM DONGHYUN;KIM MIKYOUNG;KIM MINJU;PARK SEUNG YONG;BAE SEULGI;SHUR JOONG WON;YU YULIA;LEE BOHYUN;JANG BONGHEE 发明人 KIM DONG-WOON;KIM DONGHYUN;KIM MIKYOUNG;KIM MINJU;PARK SEUNG YONG;BAE SEULGI;SHUR JOONG WON;YU YULIA;LEE BOHYUN;JANG BONGHEE
分类号 H01L21/304;H01L21/265 主分类号 H01L21/304
代理机构 代理人
主权项
地址