发明名称 |
METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME |
摘要 |
A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted. |
申请公布号 |
US2013029473(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201213558932 |
申请日期 |
2012.07.26 |
申请人 |
SAMSUNG CORNING PRECISION MATERIALS CO., LTD.;KIM DONG-WOON;KIM DONGHYUN;KIM MIKYOUNG;KIM MINJU;PARK SEUNG YONG;BAE SEULGI;SHUR JOONG WON;YU YULIA;LEE BOHYUN;JANG BONGHEE |
发明人 |
KIM DONG-WOON;KIM DONGHYUN;KIM MIKYOUNG;KIM MINJU;PARK SEUNG YONG;BAE SEULGI;SHUR JOONG WON;YU YULIA;LEE BOHYUN;JANG BONGHEE |
分类号 |
H01L21/304;H01L21/265 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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