| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve uniformity of a thin film applied to the face to be film-deposited in a film deposition object and to improve film deposition precision. <P>SOLUTION: The plasma CVD apparatus includes: a vacuum chamber 1 in which a material gas is supplied from a gas supply source to a film deposition chamber 10 whose pressure can be reduced to a vacuum state; an array antenna unit 30 in which a power supply side electrode rod which can be connected to the power supply side of a high frequency power source, and a grounding side electrode rod which can be connected to the grounding side of the high frequency power source are arranged so as to be confronted, and further, the base ends of both the electrode rods are fixed to the vacuum chamber, the tips of both the electrode rods are electrically connected, and plasma is generated at the inside of the film deposition chamber by the supply of electric power from the high frequency power source; and a substrate holding member 63 which can hold the face to be film-deposited in the substrate W so as to be confronted with both the electrode rods. The confronting interval between the face to be film-deposited in the substrate W held by the substrate holding member and the electrode rods retains a relation of larger for the base ends than for the tips in both the electrode rods. <P>COPYRIGHT: (C)2013,JPO&INPIT |
