| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide methods to prepare silicon-containing films. <P>SOLUTION: Provided are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also provided are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
