| 发明名称 |
LOW RDSON RESISTANCE LDMOS |
| 摘要 |
A device having a salicide block spacer on a second side of a gate is disclosed. The use of the salicide block spacer indirectly reduces the blocking effects during the implantation processes, thereby lowering the Rdson without compromising the breakdown voltage of the device.
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| 申请公布号 |
US2013026565(A1) |
申请公布日期 |
2013.01.31 |
| 申请号 |
US201113189573 |
申请日期 |
2011.07.25 |
| 申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD.;VERMA PURAKH RAJ;ZHANG GUOWEI |
发明人 |
VERMA PURAKH RAJ;ZHANG GUOWEI |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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