| 发明名称 |
SEMICONDUCTOR THIN-FILM FORMING METHOD, SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE, AND THIN-FILM SUBSTRATE |
| 摘要 |
A semiconductor thin-film manufacturing method includes: forming, above a substrate, an amorphous silicon film (precursor film) having a photoluminescence (PL) intensity greater than or equal to 0.65 when photon energy is 1.1 eV in a PL spectrum normalized to have a maximum PL intensity of 1; and annealing the amorphous silicon film to form a crystalline silicon film.
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| 申请公布号 |
US2013026479(A1) |
申请公布日期 |
2013.01.31 |
| 申请号 |
US201213625380 |
申请日期 |
2012.09.24 |
| 申请人 |
PANASONIC CORPORATION;PANASONIC CORPORATION |
发明人 |
KAWASHIMA TAKAHIRO;NISHITANI HIKARU;OOTAKA SEI |
| 分类号 |
H01L29/786;H01L21/20 |
主分类号 |
H01L29/786 |
| 代理机构 |
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