| 摘要 |
<p>PURPOSE: A semiconductor device is provided to improve a transistor-on property and implement the high speed response of a semiconductor device. CONSTITUTION: An oxide semiconductor layer(403) has a channel forming region. A gate electrode layer(401) is interposed in the gate insulating layer(402) and is overlapped with the oxide semiconductor layer. The oxide semiconductor layer includes indium, gallium, zinc and oxygen. The composition ratio of indium is two times higher than that of gallium and zinc. The gate insulating layer is formed on the oxide semiconductor layer.</p> |
