发明名称 Boundary scan chain for stacked memory
摘要 A boundary scan chain for stacked memory. An embodiment of a memory device includes a system element and a memory stack including one or more memory die layers, each memory die layer including input-output (I/O) cells and a boundary scan chain for the I/O cells. A boundary scan chain of a memory die layer includes a scan chain portion for each of the I/O cells, the scan chain portion for an I/O cell including a first scan logic multiplexer a scan logic latch, an input of the scan logic latch being coupled with an output of the first scan logic multiplexer, and a decoder to provide command signals to the boundary scan chain.
申请公布号 GB201222983(D0) 申请公布日期 2013.01.30
申请号 GB20120022983 申请日期 2012.12.20
申请人 INTEL CORPORATION 发明人
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