发明名称 |
PATTERN FORMING METHOD AND RESIST COMPOSITION |
摘要 |
Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF−SPI  (1) |
申请公布号 |
EP2550562(A1) |
申请公布日期 |
2013.01.30 |
申请号 |
EP20110759653 |
申请日期 |
2011.03.25 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
KATO, KEITA;TARUTANI, SHINJI;TSUCHIHASHI, TORU;KAMIMURA, SOU;ENOMOTO, YUICHIRO;FUJII, KANA;IWATO, KAORU;KATAOKA, SHOHEI;MIZUTANI, KAZUYOSHI |
分类号 |
G03F7/038;G03F7/039;G03F7/32;H01L21/027 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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