发明名称 |
Insulated gate semiconductor device with optimized breakdown voltage and manufacturing method thereof |
摘要 |
<p>An insulated gate semiconductor device (30; 60; 90; 100; 150), comprising: a semiconductor body (32, 34, 36; 102, 104, 106) having a front side (32a; 36a; 106a) and a back side (32b; 102b) opposite to one another; a drift region (36; 106'), which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region (38; 108; 156) having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region (40; 113), which extends in the body region and has the first type of conductivity; and a buried region (44; 114) having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction (Z) orthogonal to the front side and to the back side.</p> |
申请公布号 |
EP2551910(A1) |
申请公布日期 |
2013.01.30 |
申请号 |
EP20120178140 |
申请日期 |
2012.07.26 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CORONA, DONATO;SAMMATRICE, GIOVANNI;AMARA, SEBASTIANO;PISANO, SALVATORE;GRIMALDI, ANTONIO GIUSEPPE |
分类号 |
H01L29/06;H01L21/331;H01L29/08;H01L29/739 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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