发明名称 |
ATOMIC LAYER ETCHING METHOD OF GRAPHENE |
摘要 |
<p>PURPOSE: An atomic layer etching method is provided to control graphene etching with an atom as a unit, to selectively control the etching depth of graphene, to be processed uncomplicatedly, and to be commercialized. CONSTITUTION: An atomic layer etching method includes the following steps: absorbing a reactive radical on the surface of graphene; irradiating an energy source in graphene absorbed in the reactive radical; the two steps are repeated over two times; the graphene includes the thin film of overlapped multi-layer graphene; a singular layer of the thin film of graphene is etched by performing the atomic layer etching method one time; the reactive radical is generated with plasma.</p> |
申请公布号 |
KR20130011922(A) |
申请公布日期 |
2013.01.30 |
申请号 |
KR20120074309 |
申请日期 |
2012.07.09 |
申请人 |
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
YEOM, GEUN YOUNG;LIM, WOONG SUN;KIM, YI YEON;MIN, KYUNG SEOK |
分类号 |
C01B31/02;B01J19/08;B01J19/12 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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