METHOD FOR PROCESSING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for processing an oxide semiconductor film and a method for manufacturing a semiconductor device is provided to reduce parasitic capacitance and to implement high speed operation. CONSTITUTION: A reduction film(110) is formed on an oxide semiconductor film(100). Oxygen atoms of the oxide semiconductor film are move to the reduction film. Impurities are injected in the oxide semiconductor film. The reduction film is removed to form a low resistance region on the oxide semiconductor film.