发明名称 |
High performance low power bulk FET device and method of manufacture |
摘要 |
A method of forming a semiconductor device includes: forming a channel of a field effect transistor (FET) in a substrate; forming a heavily doped region in the substrate; and forming recesses adjacent the channel and the heavily doped region. The method also includes: forming an undoped or lightly doped intermediate layer in the recesses on exposed portions of the channel and the heavily doped region; and forming source and drain regions on the intermediate layer such that the source and drain regions are spaced apart from the heavily doped region by the intermediate layer.
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申请公布号 |
US8361872(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20100876480 |
申请日期 |
2010.09.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CAI JIN;FURUKAWA TOSHIHARU;ROBISON ROBERT R. |
发明人 |
CAI JIN;FURUKAWA TOSHIHARU;ROBISON ROBERT R. |
分类号 |
H01L21/336;H01L29/02 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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