发明名称 |
Method of manufacturing vertical gallium nitride based light emitting diode |
摘要 |
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.
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申请公布号 |
US8361816(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20060634106 |
申请日期 |
2006.12.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;LEE JAE HOON;LEE JUNG HEE;CHO HYUN ICK;KIM DAE KIL;RO JAE CHUL |
发明人 |
LEE JAE HOON;LEE JUNG HEE;CHO HYUN ICK;KIM DAE KIL;RO JAE CHUL |
分类号 |
H01L21/00;H01L33/00;H01L33/22 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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