| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laminated high melting point soldering layer and a fabrication method for the same which can apply the process temperature into low temperature and can shorten the process time duration and to provide a semiconductor device to which the laminated high melting point soldering layer is applied. <P>SOLUTION: The laminated high melting point soldering layer 5 includes: a laminated structure 80 which laminated a plurality of three-layered structures, the respective three-layered structures including a low melting point metal thin film layer 81 and a high melting point metal thin film layers 82 disposed on a surface and a back side surface of the low melting point metal thin film layer 81; a first high melting point metal layer 1a disposed on the surface of the laminated structure 80; and a second high melting point metal layer 1b disposed on the back side surface of the laminated structure 80. The low melting point metal thin film layer 81 and the high melting point metal thin film layer 82 are mutually alloyed by liquid phase diffusion bonding, and the laminated structure 80, and the first high melting point metal layer 1a and the second high melting point metal layer 1b are mutually alloyed by the liquid phase diffusion bonding. In addition, there is provided the semiconductor device 10 for applying the laminated high melting point soldering layer 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
