SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce source/drain region resistance or contact resistance of an nMISFET of a group III-V semiconductor and a pMISFET of a group IV semiconductor, which are formed simultaneously in the same process on a single substrate.

SOLUTION: A semiconductor device comprises a first-channel first MISFET formed on a first semiconductor crystal layer and a second-channel second MISFET formed on a second semiconductor crystal layer. A first source and a first drain of the first MISFET, and a second source and a second drain of the second MISFET are composed of the same conductive material and a work function ΦMof the conductive material satisfies at least one of relationships represented as a formula 1 and a formula 2, respectively:(Formula 1) ϕ1<ΦM<ϕ2+Eg2; (Formula 2) ¾ΦM-ϕ1¾≤0.1 eV and ¾(ϕ2+Eg2)-ΦM¾≤0.1 eV, where ϕ1represents electron affinity of an N-type semiconductor crystal layer, and ϕ2and Eg2represent electron affinity and a forbidden band width of a P-type semiconductor crystal layer, respectively.

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