发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a MOSFET includes the steps of: introducing an impurity into a silicon carbide layer; forming a carbon layer in a surface layer portion of the silicon carbide layer having the impurity introduced therein, by selectively removing silicon from the surface layer portion; and activating the impurity by heating the silicon carbide layer having the carbon layer formed therein.
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申请公布号 |
US2013023113(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201213550119 |
申请日期 |
2012.07.16 |
申请人 |
NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OFSCIENCE AND TECHNOLOGY;SUMITOMO ELECTRIC INDUSTRIES, LTD.;MASUDA TAKEYOSHI;HATAYAMA TOMOAKI |
发明人 |
MASUDA TAKEYOSHI;HATAYAMA TOMOAKI |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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