THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON

摘要

[Problem] To provide: a thin film formation composition for forming a resist under layer film for use in the production of a semiconductor device or the like; a resist upper layer film whereby it becomes possible to absorb UV light, which is undesirable in EUV lithography, by a thin film arranged on a resist upper layer with high efficiency before the reaching of the UV light to a resist layer; an under layer film (hard mask) for an EUV resist; a reverse material; and an under layer film for a solvent-developable resist. [Solution] A thin film formation composition which is to be used together with a resist in a lithography step, and comprises a mixture of (A) a titanium compound selected from the group consisting of a compound represented by formula (1), a titanium chelate compound and a hydrolysable titanium dimer with (B) a silicon compound represented by formula (2), a hydrolysis product of the mixture, or a hydrolytic condensation product of the mixture, wherein the molar number of Ti atoms relative to the total molar number of Ti atoms and Si atoms in the composition is 50 to 90%.