| 发明名称 |
NITRIDE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
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| 申请公布号 |
US2013020649(A1) |
申请公布日期 |
2013.01.24 |
| 申请号 |
US201213548522 |
申请日期 |
2012.07.13 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;BAE SUNG BUM;NAM EUN SOO;MUN JAE KYOUNG;KIM SUNG BOCK;KIM HAE CHEON;JU CHULL WON;KO SANG CHOON;LIM JONG-WON;AHN HO KYUN;CHANG WOO JIN;PARK YOUNG RAK |
发明人 |
BAE SUNG BUM;NAM EUN SOO;MUN JAE KYOUNG;KIM SUNG BOCK;KIM HAE CHEON;JU CHULL WON;KO SANG CHOON;LIM JONG-WON;AHN HO KYUN;CHANG WOO JIN;PARK YOUNG RAK |
| 分类号 |
H01L27/088;H01L21/20;H01L27/08 |
主分类号 |
H01L27/088 |
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