MULTIPLE QUANTUM WELL FOR ULTRAVIOLET LIGHT EMITTING DIODE AND A PRODUCTION METHOD THEREFOR

摘要

Provided is a multiple quantum well for an ultraviolet light emitting diode, comprising: an Alx1Ga1-x1N barrier unit in which are alternately disposed an AlN barrier atomic layer and a GaN barrier atomic layer on the AlN barrier atomic layer; and an Alx2Ga1-x2N quantum well unit in which are alternately disposed an AlN well atomic layer formed on the Alx1Ga1-x1N barrier unit and a GaN well atomic layer formed on the AlN well atomic layer. The Al compositional ratio (x1) in the Alx1Ga1-x1N barrier unit is between 0 and 0.7; the Al compositional ratio (x2) in the Alx2Ga1-x2N quantum well unit is between 0 and 0.7; the Al compositional ratio (x1) in the Alx1Ga1-x1N barrier unit is larger than the Al compositional ratio (x2) in the Alx2Ga1-x2N quantum well unit; and the Alx1Ga1-x1N barrier unit and the Alx2Ga1-x2N quantum well unit are alternately laminated at least twice.