发明名称 SWITCHING CIRCUITS
摘要 We describe a protection circuit for a normally-on silicon carbide JFET, comprising a first power switching connection coupled to the JFET drain; a gate driver circuit; and a normally-off MOSFET in series between the JFET source and a second power switching connection. The circuit includes a diode having an anode coupled to JFET gate and a cathode coupled between a second power switching connection and a source/drain connection of the MOSFET. A control circuit is coupled to the gate of the MOSFET to sense a failure of a power supply to the gate driver circuit and to switch off the MOSFET in response, for example using a bias circuit powered from this power supply. When the MOSFET is off the external power maintains the gate of the JFET negative with respect to the source, via a circuit including the internal capacitance of the off MOSFET and the diode.
申请公布号 WO2013011289(A2) 申请公布日期 2013.01.24
申请号 WO2012GB51673 申请日期 2012.07.13
申请人 CAMBRIDGE ENTERPRISE LIMITED;MCMAHON, RICHARD ANTHONY;GUEDON, FLORENT;SINGH, SANTOSH KUMAR;GARSED, PHILIP JOHN 发明人 MCMAHON, RICHARD ANTHONY;GUEDON, FLORENT;SINGH, SANTOSH KUMAR;GARSED, PHILIP JOHN
分类号 H03K17/0412;H03K17/06;H03K17/10;H03K17/20 主分类号 H03K17/0412
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