发明名称 |
INSPECTION METHOD OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR INSPECTION DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To quickly determine presence/absence of occurrence of current collapse in a field effect transistor. <P>SOLUTION: An inspection method of a semiconductor element includes a first step of calculating a first on-resistance of a field effect transistor 101 under a state where the field effect transistor 101 is in an on-state and a first voltage is applied to the drain of the field effect transistor 101; a second step of applying a second voltage larger than the first voltage is applied to the drain of the field effect transistor 101 while the field effect transistor 101 is in an off-state; and calculating a second on-resistance of the field effect transistor 101 under a state where the field effect transistor 101 is in the on-state and the second voltage is applied to the drain of the field effect transistor 101. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013015416(A) |
申请公布日期 |
2013.01.24 |
申请号 |
JP20110148610 |
申请日期 |
2011.07.04 |
申请人 |
PANASONIC CORP |
发明人 |
IGOSHI FUMITOMO;HASHIZUME SHINGO;YAMAGIWA YUTO |
分类号 |
G01R31/26;H01L21/338;H01L21/66;H01L29/778;H01L29/80;H01L29/812 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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