发明名称 INSPECTION METHOD OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR INSPECTION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To quickly determine presence/absence of occurrence of current collapse in a field effect transistor. <P>SOLUTION: An inspection method of a semiconductor element includes a first step of calculating a first on-resistance of a field effect transistor 101 under a state where the field effect transistor 101 is in an on-state and a first voltage is applied to the drain of the field effect transistor 101; a second step of applying a second voltage larger than the first voltage is applied to the drain of the field effect transistor 101 while the field effect transistor 101 is in an off-state; and calculating a second on-resistance of the field effect transistor 101 under a state where the field effect transistor 101 is in the on-state and the second voltage is applied to the drain of the field effect transistor 101. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013015416(A) 申请公布日期 2013.01.24
申请号 JP20110148610 申请日期 2011.07.04
申请人 PANASONIC CORP 发明人 IGOSHI FUMITOMO;HASHIZUME SHINGO;YAMAGIWA YUTO
分类号 G01R31/26;H01L21/338;H01L21/66;H01L29/778;H01L29/80;H01L29/812 主分类号 G01R31/26
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