发明名称 |
Apparatus and Methods for End Point Determination in Reactive Ion Etching |
摘要 |
Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.
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申请公布号 |
US2013023065(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201113189287 |
申请日期 |
2011.07.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;WANG CHIEN RHONE;LIN TZU-CHENG;CHENG YU-JEN;LAI CHIH-WEI;CHANG HUNG-PIN;WU TSANG-JIUH |
发明人 |
WANG CHIEN RHONE;LIN TZU-CHENG;CHENG YU-JEN;LAI CHIH-WEI;CHANG HUNG-PIN;WU TSANG-JIUH |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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