SEMICONDUCTOR DEVICE STRUCTURE INSULATED FROM A BULK SILICON SUBSTRATE AND METHOD OF FORMING THE SAME

摘要

A structure making up a part of a semiconductor device, such as a fin structure of a finFET device, is formed on and electrically isolated from a semiconductor substrate. The structure is comprised of the semiconductor substrate material and is electrically isolated from a remaining portion of the semiconductor substrate by an insulating barrier. The insulating barrier is formed by an isotropic oxidation process that oxidizes portions of the semiconductor substrate that are not protected by an oxidation barrier.