| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for a semiconductor device manufacturing method including a step of forming a metal silicide film by laser annealing, to reduce a thermal load applied to an area other than an area for forming the metal silicide film to inhibit deterioration in characteristics of the semiconductor device. <P>SOLUTION: In a semiconductor device manufacturing method of the present invention, by forming a permeable film PF in an area (area AR1) to be silicided and not forming the permeable film PF in an area (area AR2) not to be silicided, for example, a temperature of the area to be silicided is raised higher than an eutectic temperature for silicide while a temperature of the area not to be silicided is kept lower than the eutectic temperature for silicide when ultraviolet laser beams UV are radiated. <P>COPYRIGHT: (C)2013,JPO&INPIT |
