发明名称 MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A memory device includes a plurality of memory elements, each having a first electrode, a second electrode, and a memory layer between the first electrode and the second electrode. The plurality of memory layers are in a dotlike pattern. Two adjacent first electrodes share a same memory layer.
申请公布号 US2013021834(A1) 申请公布日期 2013.01.24
申请号 US201213549090 申请日期 2012.07.13
申请人 SONY CORPORATION;KOYAMA KAZUHIDE 发明人 KOYAMA KAZUHIDE
分类号 H01L47/00;G11C11/00;H01L21/02 主分类号 H01L47/00
代理机构 代理人
主权项
地址