| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device comprises a first memory block and a second memory block, and a control circuit. In read operation, when a read target block is the first memory block, the control circuit determines whether the first memory block is single-level or multi-level according to a first flag, and stores a first determination result thereof. While the read target block is the first memory block, the control circuit reads the first memory block as single-level or multi-level according to the first determination result. When the read target block is changed from the first memory block to the second memory block, the control circuit erases the first determination result.
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