| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique of reducing the polishing amount of a polished object on the periphery thereof, when performing the polishing of CMP method by using an abrasive pad. <P>SOLUTION: An abrasive pad 10 for polishing a semiconductor wafer 8 (polished object) placed on the inner peripheral side of a retainer ring 9 in the Chemical Mechanical Polishing(CMP) method includes a hard layer 12 having a polishing surface 10a of the abrasive pad 10, and a soft layer 13 which is placed on the opposite side of the semiconductor wafer 8 while sandwiching the hard layer 12 and softer than the hard layer 12. The specific depression differential value ΔT, i.e., the difference of depression of the polishing surface 10a when different loads are made to act thereon, is 86 (μm) or less. When using the abrasive pad 10 mentioned above, the polishing amount of the semiconductor wafer 8 on the periphery thereof can be reduced when performing the polishing of CMP method by using the abrasive pad 10, as shown in FIGS. 3, 4 and 6. <P>COPYRIGHT: (C)2013,JPO&INPIT |
