| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin-injection writing type magnetoresistive element, in which magnetization of a storage layer can be inverted at a low current. <P>SOLUTION: There is provided a magnetoresistive element comprising: a storage layer 3 which includes a magnetization easy axis in a vertical direction of a film surface and a direction of magnetization of which is variable; a fixed layer 2 which includes a magnetization easy axis in the vertical direction of the film surface and a direction of magnetization of which is invariant; a non-magnetic layer 4 provided between the storage layer 3 and the fixed layer 2; and a wiring layer 10 arranged on a surface of the storage layer 3 opposite to a surface on which the non-magnetic layer 4 is arranged. The storage layer 3 has a configuration in which magnetic materials 31, 33 and non-magnetic materials 32, 34 are alternately stacked. The non-magnetic materials 32, 34 contain at least one element from a group of Ta, W, Nb, Mo, Zr, and Hf. The magnetic materials 31, 33 contain Co and Fe. One of the magnetic materials contacts the non-magnetic layer 4, and one of the non-magnetic materials contacts the wiring layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
